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김진상

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경희대학교 전자정보대학 전자공학과

논문[65]

#65. Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

2020.4

(DOI) https://www.doi.org/10.1109/IRPS45951.2020.9128910

#64. A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications

2018.12

(DOI) https://www.doi.org/10.1109/ASSCC.2018.8579254