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전우진

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경희대학교 공과대학 정보전자신소재공학과

논문[117]

#117. Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO 2 Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor

2022.06 · physica status solidi (a)

(DOI) https://doi.org/10.1002/pssa.202100652

#116. Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application

2022.2 · Ceramics International

(DOI) https://www.doi.org/10.1016/j.ceramint.2021.10.097