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    김광수
    Position 교수
    Current Department 서강대학교 공과대학 전자공학
    프로필
    연구 성과
    논문[20]
    #20. High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
    Journal Information 2022.9 · Energies
    Identifier (DOI) https://doi.org/10.3390/en15196960
    #19. High performance 4H-SiC MOSFET with deep source trench
    Journal Information 2022.4 · Semiconductor Science and Technology
    Identifier (DOI) https://doi.org/10.1088/1361-6641/ac5103
    발표[12]
    #12. 3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss
    Organization 2022 International Conference on Electronics, Information, and Communication (ICEIC)
    Date 2022.2
    #11. The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV
    Organization 2021 International Conference on Electronics, Information, and Communication (ICEIC)
    Date 2021.1
    특허[30]
    #30. 고전압 SiC MOSFET 전력 소자 및 그 제조 방법
    Identifier [출원] 10-2021-0081337
    Patent Country 대한민국
    #29. 고전압 SiC MOSFET 전력 소자 및 그 제조 방법
    Identifier [출원] 10-2021-0027453
    Patent Country 대한민국
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