ResearchWho?
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    양경훈
    Position 교수
    Current Department 한국과학기술원 공과대학 전기및전자공학부
    프로필
    연구 성과
    논문[87]
    #87. Area-Efficient Series-Connected Resonant Tunneling Diode Pair as Binary Neuron in Cellular Neural Network
    Journal Information 2020.9 · IEEE Electron Device Letters
    Identifier (DOI) https://doi.org/10.1109/LED.2020.3008164
    #86. A 24-GHz Low-Power RTD-Based ON–OFF Keying Oscillator With an RTD Pair Configuration
    Journal Information 2018.6 · IEEE Microwave and Wireless Components Letters
    Identifier (DOI) https://doi.org/10.1109/LMWC.2018.2831201
    프로시딩[2]
    #2. InP/InGaAs HBTs using crystallographically defined emitter contact technology
    Journal Information 2003.7
    Identifier (DOI) https://doi.org/10.1109/MWSYM.2003.1212603
    #1. A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects
    Journal Information 2002.2
    Identifier (DOI) https://doi.org/10.1109/MWSYM.2002.1012294
    발표[33]
    #33. Comparison of On-chip De-embedding Methods with 28-nm FDSOI MOSFETs up to 110-GHz
    Organization 2019 IEEE Asia-Pacific Microwave Conference (APMC)
    Date 2019.12
    #32. A Sub-THz RTD-pair Oscillator with Enhanced RF Output Power Characteristics
    Organization 2019 Compound Semiconductor Week (CSW)
    Date 2019.5
    특허[17]
    #17. GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING INNER FIELD-PLATE FOR HIGH POWER APPLICATIONS
    Identifier [등록] 7,696,535
    Patent Country 미국
    #16. Data Receiver and Data Receiving method
    Identifier [출원] 11/677,779
    Patent Country 대한민국
    팔로우 추천