ResearchWho?
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    강봉구
    Position Emeritus Professor
    Current Department 포항공과대학교 전자전기공학과
    프로필
    연구 성과
    논문[123]
    #123. Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with …
    Journal Information 2020.4 · Japanese Journal of Applied Physics
    Identifier (DOI) https://doi.org/10.35848/1347-4065/ab80a2
    #122. Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO2 MOSFETs
    Journal Information 2020.4 · Japanese Journal of Applied Physics
    Identifier (DOI) https://doi.org/10.35848/1347-4065/ab80a3
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