ResearchWho?

김형섭

교수

성균관대학교 공과대학 신소재공학부

논문[194]

#194. Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

2022.9 · Solid-State Electronics 197(2):108447

(DOI) https://doi.org/10.1016/j.sse.2022.108447

#193. Sublayer thickness dependence of nanolaminated HfO 2 –Al 2 O 3 films for ferroelectric phase stabilization

2022.5 · Applied Physics Letters 120(22):222902

(DOI) https://doi.org/10.1063/5.0092125

발표[26]

#26. Top-gated MoS2 field-effect transistor with ultra-thin HfO2 gate dielectric formed by Hf-seeded atomic layer deposition

The 7th International Conference on Microelectronics and Plasma Technology (ICMAP 2018)

#25. Dual-temperature Atomic Layer Deposition of HfO2/Al2O3 on In0.53Ga0.47As"

AVS 66th International Symposium, Columbus, USA

특허[9]

#9. 결정질 산화막을 포함한 저항 메모리 소자 및 이의 제조 방법

[등록] 10-1401221

대한민국

#8. 인버터 소자 및 이의 제조 방법(INVERTER DEVICE AND PRODUCING METHOD OF THE SAME)

[등록] 10-1693663

대한민국